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Conference contributions
Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate
Publication:
Low-frequency noise behavior of nMOSFETs with different Al2O3 capping layer thickness and TiN gate
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Date
2019
Proceedings Paper
https://doi.org/10.5075/epfl-ICLAB-ICNF-269189
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wang, Danghui
;
Simoen, Eddy
;
Govoreanu, Bogdan
;
Kubicek, Stefan
;
Jussot, Julien
;
Chan, BT
;
Dumoulin Stuyck, Nard
;
Radu, Iuliana
;
Mocuta, Dan
;
Claeys, Cor
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1960
since deposited on 2021-10-27
1
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Acq. date: 2025-12-16
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Metrics
Views
1960
since deposited on 2021-10-27
1
last month
Acq. date: 2025-12-16
Citations