Publication:

Source/drain materials for Ge nMOS devices

Date

2019-10
Proceedings Paper
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dc.contributor.authorVohra, Anurag
dc.contributor.authorPorret, Clément
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorCapogreco, Elena
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorVohra, Anurag
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorCapogreco, Elena
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecVohra, Anurag::0000-0002-2831-0719
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-27T23:02:11Z
dc.date.available2021-10-27T23:02:11Z
dc.date.issued2019-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34404
dc.identifier.urlhttp://ecst.ecsdl.org/content/93/1/29.abstract
dc.source.beginpage29
dc.source.conference2nd Joint ISTDM / ICSI 2019 Conference
dc.source.conferencedate2/06/2019
dc.source.conferencelocationMadison USA
dc.source.endpage33
dc.title

Source/drain materials for Ge nMOS devices

dc.typeProceedings paper
dspace.entity.typePublication
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