Publication:

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

Date

1997
Proceedings Paper
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dc.contributor.authorJin, S.
dc.contributor.authorBender, Hugo
dc.contributor.authorDonaton, R. A.
dc.contributor.authorMaex, Karen
dc.contributor.authorVantomme, Andre
dc.contributor.authorLangouche, G.
dc.contributor.authorSt. Amour, A.
dc.contributor.authorSturm, J. C.
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorVantomme, Andre
dc.date.accessioned2021-09-30T08:30:55Z
dc.date.available2021-09-30T08:30:55Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1955
dc.source.beginpage359
dc.source.conferenceControl of Semiconductor Surfaces and Interfaces
dc.source.conferencedate2/12/1996
dc.source.conferencelocationBoston, MA USA
dc.source.endpage364
dc.title

Microstructural studies of Co silicide layers formed on SiGe and SiGeC

dc.typeProceedings paper
dspace.entity.typePublication
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