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AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity

Date

2008
Journal article
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dc.contributor.authorCheng, Kai
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorDerluyn, Joff
dc.contributor.authorSijmus, Bram
dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.date.accessioned2021-10-17T06:29:55Z
dc.date.available2021-10-17T06:29:55Z
dc.date.issued2008
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13505
dc.source.beginpage1553
dc.source.endpage1555
dc.source.issue3
dc.source.journalJapanese Journal of Applied Physics
dc.source.volume47
dc.title

AlGaN/GaN high electron mobility transistors grown on 150mm Si(111) substrates with high uniformity

dc.typeJournal article
dspace.entity.typePublication
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