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New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

 
dc.contributor.authorAsanovski, R.
dc.contributor.authorGrill, Alexander
dc.contributor.authorFranco, Jacopo
dc.contributor.authorPalestri, P.
dc.contributor.authorBeckers, Arnout
dc.contributor.authorKaczer, Ben
dc.contributor.authorSelmi, L.
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorBeckers, Arnout
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecBeckers, Arnout::0000-0003-3663-0824
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2023-06-01T15:25:31Z
dc.date.available2023-05-25T20:20:42Z
dc.date.available2023-06-01T15:25:31Z
dc.date.issued2022
dc.description.wosFundingTextThis work is funded in part by imec's Industrial Affiliation Program on Quantum Computing and Cryoelectronics. Furthermore, the internship leading to this work has been funded by the "Universita degli Studi di Modena e Reggio Emilia" through the "Bando giovani ricercatori 2021".
dc.identifier.doi10.1109/IEDM45625.2022.10019388
dc.identifier.eisbn978-1-6654-8959-1
dc.identifier.issn2380-9248
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41637
dc.publisherIEEE
dc.source.conferenceInternational Electron Devices Meeting (IEDM)
dc.source.conferencedateDEC 03-07, 2022
dc.source.conferencelocationSan Francisco
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsLOW-FREQUENCY NOISE
dc.title

New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications

dc.typeProceedings paper
dspace.entity.typePublication
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