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Ohmic contacts with ultra-low optical loss on heavily doped n-type InGaAs and InGaAsP for InP-based photonic membranes

Date

2016-02
Journal article
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dc.contributor.authorShen, L.
dc.contributor.authorvan Veldhoven, P.J.
dc.contributor.authorJiao, Y.
dc.contributor.authorDolores-Calzadilla, V.
dc.contributor.authorvan de Tol, J.J.G.M.
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorSmit, M.K.
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2021-10-23T14:50:06Z
dc.date.available2021-10-23T14:50:06Z
dc.date.embargo9999-12-31
dc.date.issued2016-02
dc.identifier.issn1943-0655
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27300
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7397876
dc.source.beginpage4500210
dc.source.issue1
dc.source.journalIEEE Photonics Journal
dc.source.volume8
dc.title

Ohmic contacts with ultra-low optical loss on heavily doped n-type InGaAs and InGaAsP for InP-based photonic membranes

dc.typeJournal article
dspace.entity.typePublication
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