Publication:

W-band high-gain amplifier using InP dual-gate HEMT technology

Date

1997
Proceedings Paper
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dc.contributor.authorvan der Zanden, Koen
dc.contributor.authorBaeyens, Yves
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorDe Raedt, Walter
dc.contributor.authorVan Rossum, Marc
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorDe Raedt, Walter
dc.date.accessioned2021-09-30T09:49:16Z
dc.date.available2021-09-30T09:49:16Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2229
dc.source.beginpage249
dc.source.conferenceIndium Phosphide and Related Compounds Conference - IPRM
dc.source.conferencedate11/05/1997
dc.source.conferencelocationHyannis, MA USA
dc.source.endpage252
dc.title

W-band high-gain amplifier using InP dual-gate HEMT technology

dc.typeProceedings paper
dspace.entity.typePublication
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