Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs

dc.contributor.author	Nogueira, Alexandro de M.
dc.contributor.author	Agopian, Paula G. D.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Rooyackers, Rita
dc.contributor.author	Claeys, Cor
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Martino, Joao A.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.orcidext	Nogueira, Alexandro de M.::0000-0002-6248-2514
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2022-02-24T16:18:28Z
dc.date.available	2022-02-24T16:18:28Z
dc.date.issued	2021
dc.identifier.doi	10.1016/j.sse.2021.108099
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/39128
dc.publisher	PERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpage	108099
dc.source.issue	na
dc.source.journal	SOLID-STATE ELECTRONICS
dc.source.numberofpages	7
dc.source.volume	186
dc.subject.keywords	ANALOG PERFORMANCE
dc.subject.keywords	PARAMETERS
dc.title	Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs
dc.type	Journal article
dspace.entity.type	Publication
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