Publication:

High-Q torsional mode Si triangular beam resonators encapsulated using SiGe thin film

Date

2010
Proceedings Paper
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dc.contributor.authorNaito, Yasuyuki
dc.contributor.authorHelin, Philippe
dc.contributor.authorNakamura, K.
dc.contributor.authorDe Coster, Jeroen
dc.contributor.authorGuo, Bin
dc.contributor.authorHaspeslagh, Luc
dc.contributor.authorOnishi, K.
dc.contributor.authorTilmans, Harrie
dc.contributor.imecauthorHelin, Philippe
dc.contributor.imecauthorDe Coster, Jeroen
dc.contributor.imecauthorHaspeslagh, Luc
dc.contributor.imecauthorTilmans, Harrie
dc.contributor.orcidimecTilmans, Harrie::0000-0003-4240-4962
dc.date.accessioned2021-10-18T19:28:48Z
dc.date.available2021-10-18T19:28:48Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17681
dc.source.beginpage154
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage157
dc.title

High-Q torsional mode Si triangular beam resonators encapsulated using SiGe thin film

dc.typeProceedings paper
dspace.entity.typePublication
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