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Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit

Date

2017-08
Journal article
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dc.contributor.authorKumari, Sulakshna
dc.contributor.authorGustavsson, Johan
dc.contributor.authorHaglund, E.P.
dc.contributor.authorBengtsson, Jorgen
dc.contributor.authorLarsson, Anders
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorBaets, Roel
dc.contributor.imecauthorKumari, Sulakshna
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.imecauthorBaets, Roel
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.contributor.orcidimecBaets, Roel::0000-0003-1266-1319
dc.date.accessioned2021-10-24T07:13:45Z
dc.date.available2021-10-24T07:13:45Z
dc.date.embargo9999-12-31
dc.date.issued2017-08
dc.identifier.issn1943-0655
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28722
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7954576/
dc.source.beginpage1504109
dc.source.issue4
dc.source.journalIEEE Photonics Journal
dc.source.volume9
dc.title

Design of an 845-nm GaAs vertical-cavity silicon-integrated laser with an intracavity grating for coupling to a SiN waveguide circuit

dc.typeJournal article
dspace.entity.typePublication
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