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Nucleation of ultra nanocrystalline diamond films using carbon diffusion through a Ti layer towards pretreated silicon and quartz substrates, as a seeding enhancement

Date

2004
Meeting abstract
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dc.contributor.authorDaenen, M.
dc.contributor.authorNesladek, Milos
dc.contributor.authorPotocky, S.
dc.contributor.authorMortet, V.
dc.contributor.authorD'Haen, Jan
dc.contributor.authorRosa, J.
dc.contributor.imecauthorNesladek, Milos
dc.contributor.imecauthorD'Haen, Jan
dc.date.accessioned2021-10-15T12:59:24Z
dc.date.available2021-10-15T12:59:24Z
dc.date.embargo9999-12-31
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8743
dc.source.beginpage73
dc.source.conferenceInternational Scientific Meeting Belgian Physical Society. Abstracts Book
dc.source.conferencedate25/06/2004
dc.source.conferencelocationMons Belgium
dc.title

Nucleation of ultra nanocrystalline diamond films using carbon diffusion through a Ti layer towards pretreated silicon and quartz substrates, as a seeding enhancement

dc.typeMeeting abstract
dspace.entity.typePublication
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