Publication:

Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors

Date

2020
Proceedings Paper
https://doi.org/10.1109/IIRW49815.2020.9312864
Simple item page Full metadata Statistics
 
dc.contributor.authorVasilev, Alexander
dc.contributor.authorJech, Markus
dc.contributor.authorGrill, Alexander
dc.contributor.authorRzepa, Gerhard
dc.contributor.authorSchleich, Christian
dc.contributor.authorMakarov, Alexander
dc.contributor.authorPobegen, Gregor
dc.contributor.authorGrasser, Tibor
dc.contributor.authorWaltl, Michael
dc.contributor.authorTyaginov, Stanislav
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.date.accessioned2022-01-19T10:51:39Z
dc.date.available2021-11-02T16:01:03Z
dc.date.available2022-01-19T10:51:39Z
dc.date.issued2020
dc.identifier.doi10.1109/IIRW49815.2020.9312864
dc.identifier.eisbn978-1-7281-7058-9
dc.identifier.issn1930-8841
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37872
dc.publisherIEEE
dc.source.beginpage31
dc.source.conferenceIEEE International Integrated Reliability Workshop (IIRW)
dc.source.conferencedateOCT 04-NOV 01, 2020
dc.source.conferencelocationSouth Lake Tahoe, CA, USA
dc.source.endpage34
dc.source.journalna
dc.source.numberofpages4
dc.subject.keywordsINSTABILITY
dc.subject.keywordsMECHANISMS
dc.title

Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions