Publication:

Impacts of Ta buffer layer and Cu-Ge-Te composition on the reliability of GeSe-based CBRAM

Date

2019
Journal article
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dc.contributor.authorRadhakrishnan, Janaki
dc.contributor.authorBelmonte, Attilio
dc.contributor.authorDevulder, Wouter
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorHoussa, Michel
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorGoux, Ludovic
dc.contributor.imecauthorRadhakrishnan, Janaki
dc.contributor.imecauthorBelmonte, Attilio
dc.contributor.imecauthorDevulder, Wouter
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.orcidimecDevulder, Wouter::0000-0002-5156-0177
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-27T16:36:00Z
dc.date.available2021-10-27T16:36:00Z
dc.date.embargo9999-12-31
dc.date.issued2019
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/33847
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8902010
dc.source.beginpage5133
dc.source.endpage5138
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume66
dc.title

Impacts of Ta buffer layer and Cu-Ge-Te composition on the reliability of GeSe-based CBRAM

dc.typeJournal article
dspace.entity.typePublication
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