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Lithography options for the 32nm half pitch node and their implications on resist and material technology

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dc.contributor.authorGronheid, Roel
dc.contributor.authorHendrickx, Eric
dc.contributor.authorWiaux, Vincent
dc.contributor.authorMaenhoudt, Mireille
dc.contributor.authorGoethals, Mieke
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorRonse, Kurt
dc.contributor.imecauthorGronheid, Roel
dc.contributor.imecauthorHendrickx, Eric
dc.contributor.imecauthorWiaux, Vincent
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.imecauthorRonse, Kurt
dc.contributor.orcidimecRonse, Kurt::0000-0003-0803-4267
dc.date.accessioned2021-10-16T16:25:00Z
dc.date.available2021-10-16T16:25:00Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12233
dc.source.beginpage68271V
dc.source.conferenceQuantum Optics, Optical Data Storage, and Advanced Microlithography
dc.source.conferencedate11/11/2007
dc.source.conferencelocationBeijing China
dc.title

Lithography options for the 32nm half pitch node and their implications on resist and material technology

dc.typeProceedings paper
dspace.entity.typePublication
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