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Enhanced tunneling current effect for nonvolatile memory applications

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dc.contributor.authorGovoreanu, Bogdan
dc.contributor.authorBlomme, Pieter
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorGovoreanu, Bogdan
dc.contributor.imecauthorBlomme, Pieter
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-14T21:43:37Z
dc.date.available2021-10-14T21:43:37Z
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6366
dc.source.beginpage154
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices - SSDM
dc.source.conferencedate17/09/2002
dc.source.conferencelocationNagoya Japan
dc.source.endpage155
dc.title

Enhanced tunneling current effect for nonvolatile memory applications

dc.typeProceedings paper
dspace.entity.typePublication
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