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The influence of recovery and temperature on the NBTI power-law exponent

Date

2004
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dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorArkhipov, Vladimir
dc.contributor.authorCollaert, Nadine
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorGoodwin, Michael
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-15T14:06:04Z
dc.date.available2021-10-15T14:06:04Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9107
dc.source.conferenceSemiconductor Interface Specialists Conference - SISC
dc.source.conferencedate9/12/2004
dc.source.conferencelocationSan Diego, CA USA
dc.title

The influence of recovery and temperature on the NBTI power-law exponent

dc.typeOral presentation
dspace.entity.typePublication
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