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Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

Date

2007
Journal article
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dc.contributor.authorChauhan, Y.
dc.contributor.authorKrummenacher, F.
dc.contributor.authorGillon, R.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDeclercq, M.
dc.contributor.authorIonescu, A.
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2021-10-16T15:15:19Z
dc.date.available2021-10-16T15:15:19Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11843
dc.source.beginpage1527
dc.source.endpage1539
dc.source.issue6
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume54
dc.title

Compact modeling of lateral nonuniform doping in high-voltage MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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