Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodology

dc.contributor.author	Boudier, Dimitri
dc.contributor.author	Cretu, Bogdan
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Carin, Regis
dc.contributor.author	Veloso, Anabela
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Thean, Aaron
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.imecauthor	Veloso, Anabela
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Thean, Aaron
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2021-10-24T03:07:01Z
dc.date.available	2021-10-24T03:07:01Z
dc.date.issued	2017
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/27907
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0038110116301757
dc.source.beginpage	102
dc.source.endpage	108
dc.source.issue	1
dc.source.journal	Solid-State Electronics
dc.source.volume	128
dc.title	Low frequency noise assessment in n- and p-channel sub-10 nm triple-gate FinFETs. Part I: Theory and methodology
dc.type	Journal article
dspace.entity.type	Publication
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