Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE

dc.contributor.author	Bougrioua, Zahia
dc.contributor.author	Moerman, Ingrid
dc.contributor.author	Demeester, Piet
dc.contributor.author	Thrush, E. J.
dc.contributor.author	Guyaux, J. L.
dc.contributor.author	Garcia, J. C.
dc.contributor.imecauthor	Moerman, Ingrid
dc.contributor.imecauthor	Demeester, Piet
dc.contributor.orcidimec	Moerman, Ingrid::0000-0003-2377-3674
dc.date.accessioned	2021-10-06T10:44:51Z
dc.date.available	2021-10-06T10:44:51Z
dc.date.embargo	9999-12-31
dc.date.issued	1999
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/3262
dc.source.beginpage	61
dc.source.conference	Proceedings of the 8th European Workshop on MOVPE
dc.source.conferencedate	08/06/1999
dc.source.conferencelocation	Prague Czech Republic
dc.source.endpage	63
dc.title	Influence of growth temperature on electrical characteristics of silicon doped GaAn grown by LP-MOVPE
dc.type	Proceedings paper
dspace.entity.type	Publication
Files	Original bundle Name: 3224.pdf Size: 234.42 KB Format: Adobe Portable Document Format Download
Publication available in collections:	Conference contributions

Date