Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator

dc.contributor.author	Rahman, F.
dc.contributor.author	Gallagher, B.
dc.contributor.author	Behet, Markus
dc.contributor.author	De Boeck, Jo
dc.contributor.imecauthor	De Boeck, Jo
dc.date.accessioned	2021-10-01T08:45:22Z
dc.date.available	2021-10-01T08:45:22Z
dc.date.embargo	9999-12-31
dc.date.issued	1998
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/2891
dc.source.beginpage	88
dc.source.endpage	90
dc.source.issue	1
dc.source.journal	Applied Physics Letters
dc.source.volume	73
dc.title	Gating of InAs/GaSb quantum wells using a silicon monoxide gate insulator
dc.type	Journal article
dspace.entity.type	Publication
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