Publication:

Transistors on two-dimensional semiconductors: contact resistance limited by the contact edges

Date

2017
Proceedings Paper
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dc.contributor.authorArutchelvan, Goutham
dc.contributor.authorMatagne, Philippe
dc.contributor.authorLockhart de la Rosa, Cesar Javier
dc.contributor.authorSutar, Surajit
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorRadu, Iuliana
dc.contributor.imecauthorArutchelvan, Goutham
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorLockhart de la Rosa, Cesar Javier
dc.contributor.imecauthorSutar, Surajit
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.date.accessioned2021-10-24T02:53:21Z
dc.date.available2021-10-24T02:53:21Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27768
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7968951/
dc.source.beginpage1
dc.source.conferenceIEEE International Interconnect Technology Conference - IITC
dc.source.conferencedate16/05/2017
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage3
dc.title

Transistors on two-dimensional semiconductors: contact resistance limited by the contact edges

dc.typeProceedings paper
dspace.entity.typePublication
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