Publication:

Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination

Date

2013
Journal article
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dc.contributor.authorLenci, Silvia
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorCarbonell, Laure
dc.contributor.authorHu, Jie
dc.contributor.authorMannaert, Geert
dc.contributor.authorWellekens, Dirk
dc.contributor.authorYou, Shuzhen
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-21T09:12:36Z
dc.date.available2021-10-21T09:12:36Z
dc.date.issued2013
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22664
dc.source.beginpage1035
dc.source.endpage1037
dc.source.issue8
dc.source.journalIEEE Electron Device Letters
dc.source.volume34
dc.title

Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination

dc.typeJournal article
dspace.entity.typePublication
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