Publication:

Controlled III/V nanowire growth by selective-area vapour phase epitaxy

Date

2009
Proceedings Paper
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dc.contributor.authorCantoro, Mirco
dc.contributor.authorBrammertz, Guy
dc.contributor.authorRichard, Olivier
dc.contributor.authorClemente, Francesca
dc.contributor.authorLeys, Maarten
dc.contributor.authorDegroote, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-17T21:30:37Z
dc.date.available2021-10-17T21:30:37Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15062
dc.identifier.urlhttp://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=ECSTF8000019000005000309000001&idtype=cvips&prog=normal
dc.source.beginpage309
dc.source.conferenceGraphene and Emerging Materials for Post-CMOS Applications
dc.source.conferencedate24/05/2009
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage329
dc.title

Controlled III/V nanowire growth by selective-area vapour phase epitaxy

dc.typeProceedings paper
dspace.entity.typePublication
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