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Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN
Publication:
Chemical role of SF6 in a SiCl4-based reactive ion etching of GaN
Date
1999
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3516.pdf
118.42 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Karouta, F.
;
Jacobs, B.
;
Kramer, M. C. J. C. M.
;
Jacobs, Koen
;
Moerman, Ingrid
Journal
Abstract
Description
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Views
1990
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations
Metrics
Views
1990
since deposited on 2021-10-06
Acq. date: 2025-10-23
Citations