Publication:

A multi-energy level agnostic approach for defect generation during TDDB stress

Date

2022
Journal article
https://doi.org/10.1016/j.sse.2022.108298
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dc.contributor.authorVici, Andrea
dc.contributor.authorDegraeve, Robin
dc.contributor.authorKaczer, Ben
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVan Beek, Simon
dc.contributor.authorDe Wolf, Ingrid
dc.contributor.imecauthorVici, Andrea
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVan Beek, Simon
dc.contributor.imecauthorDe Wolf, Ingrid
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVan Beek, Simon::0000-0002-2499-4172
dc.contributor.orcidimecDe Wolf, Ingrid::0000-0003-3822-5953
dc.date.accessioned2022-08-31T10:23:49Z
dc.date.available2022-05-27T02:22:57Z
dc.date.available2022-06-24T13:19:39Z
dc.date.available2022-08-31T10:23:49Z
dc.date.issued2022
dc.identifier.doi10.1016/j.sse.2022.108298
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39898
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.issueSpecial issue: Papers from INFOS 2021
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages8
dc.source.volume193
dc.subject.keywordsULTRATHIN SILICON DIOXIDE
dc.subject.keywordsSUBSTRATE-HOT-ELECTRON
dc.subject.keywordsTRAP GENERATION
dc.subject.keywordsTHIN GATE
dc.subject.keywordsE MODEL
dc.subject.keywordsBREAKDOWN
dc.subject.keywordsRELIABILITY
dc.title

A multi-energy level agnostic approach for defect generation during TDDB stress

dc.typeJournal article
dspace.entity.typePublication
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