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Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics

Date

2015
Meeting abstract
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dc.contributor.authorSaripalli, Yoga
dc.contributor.authorZhao, Ming
dc.contributor.authorLiang, Hu
dc.contributor.authorKandaswamy, Prem Kumar
dc.contributor.authorNovak, Tomas
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorStoffels, Steve
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorPosthuma, Niels
dc.contributor.authorMarcon, Denis
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLanger, Robert
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-22T22:32:44Z
dc.date.available2021-10-22T22:32:44Z
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25861
dc.source.conference20th American Conf on Crystal Growth and Epitaxy - ACCGE-20
dc.source.conferencedate1/08/2015
dc.source.conferencelocationBig Sky, MT USA
dc.title

Dispersion free high voltage III-N buffer development on 200 mm silicon for power electronics

dc.typeMeeting abstract
dspace.entity.typePublication
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