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Gate reliability of p-GaN HEMT with gate metal retraction
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Gate reliability of p-GaN HEMT with gate metal retraction
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Date
2019
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Tallarico, Andrea
;
Stoffels, Steve
;
Posthuma, Niels
;
Bakeroot, Benoit
;
Decoutere, Stefaan
;
Sangiorgi, E
;
Fiegna, C
Journal
IEEE Transactions on Electron Devices
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1925
since deposited on 2021-10-27
Acq. date: 2025-12-13
Citations
Metrics
Views
1925
since deposited on 2021-10-27
Acq. date: 2025-12-13
Citations