Publication:

Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs

Date

2012
Proceedings Paper
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dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorLee, Jae Woo
dc.contributor.authorPantisano, Luigi
dc.contributor.authorChiarella, Thomas
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorKrom, Raymond
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorRosseel, Erik
dc.contributor.authorBrus, Stephan
dc.contributor.authorMaes, J.W.
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorTolle, J.
dc.contributor.authorEneman, Geert
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorMannaert, Geert
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorDemand, Marc
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorMannaert, Geert
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-20T16:58:16Z
dc.date.available2021-10-20T16:58:16Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21614
dc.source.beginpage18.2
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate10/12/2012
dc.source.conferencelocationSan Francisco, CA USA
dc.title

Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs

dc.typeProceedings paper
dspace.entity.typePublication
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