Publication:

N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices

Date

2008
Proceedings Paper
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dc.contributor.authorPetry, Jasmine
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorXiong, K.
dc.contributor.authorMueller, Markus
dc.contributor.authorHooker, Jacob
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-17T09:49:27Z
dc.date.available2021-10-17T09:49:27Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14310
dc.source.beginpage286
dc.source.conference38th European Solid-State Device Research Conference - ESSDERC
dc.source.conferencedate16/09/2008
dc.source.conferencelocationEdinburgh UK
dc.source.endpage289
dc.title

N-type VT tuning by Te ion implantation in moly-based metal gates with high-k dielectric for fully depleted devices

dc.typeProceedings paper
dspace.entity.typePublication
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