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Demonstration of sufficient BTI reliability for a 14-nm FinFET 1.8V I/O technology featuring a thick ALD SiO2 IL and Ge p-channel
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1864 since deposited on 2021-10-24
Acq. date: 2025-10-23
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Views
1864 since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations