Publication:

Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

Date

2013
Proceedings Paper
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dc.contributor.authorFavia, Paola
dc.contributor.authorRichard, Olivier
dc.contributor.authorGeypen, Jef
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMerckling, Clement
dc.contributor.authorGuo, Weiming
dc.contributor.authorCaymax, Matty
dc.contributor.authorBender, Hugo
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorGeypen, Jef
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-21T07:35:11Z
dc.date.available2021-10-21T07:35:11Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22335
dc.source.beginpage12010
dc.source.conference18th Microscopy of Semiconducting Materials Conference - MSM XVIII
dc.source.conferencedate7/04/2013
dc.source.conferencelocationOxford UK
dc.title

Composition variation of In1-xGaxAs epitaxially grown in narrow trenches on Si

dc.typeProceedings paper
dspace.entity.typePublication
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