A novel isolation scheme featuring cavities in the collector for a high-speed 0.13μm SiGe:C BiCMOS technology

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Author(s)

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Van Huylenbroeck, Stefaan

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van Noort, Wibo

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Piontek, Andreas

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Sibaja-Hernandez, Arturo

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Meunier-Beillard, Philippe

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Neuilly, Francois

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Leray, Philippe

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Vleugels, Frank

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Venegas, Rafael

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Decoutere, Stefaan

Metrics

1921 since deposited on 2021-10-16

Acq. date: 2025-10-23