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Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth

Date

2017-05
Proceedings Paper
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dc.contributor.authorMurota, Junichi
dc.contributor.authorYamamoto, Yuchi
dc.contributor.authorCostina, Ioan
dc.contributor.authorTillack, Bernd
dc.contributor.authorLe Thanh, Vin
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-24T09:50:15Z
dc.date.available2021-10-24T09:50:15Z
dc.date.embargo9999-12-31
dc.date.issued2017-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29044
dc.identifier.urlhttp://ecst.ecsdl.org/content/79/1/33.short?rss=1
dc.source.beginpage33
dc.source.conferenceULSIC vs TFT: 6th Int Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors
dc.source.conferencedate21/05/2017
dc.source.conferencelocationHernstein Austria
dc.source.endpage42
dc.title

Atomically controlled processing for dopant segregation in CVD Si and Ge epitaxial growth

dc.typeProceedings paper
dspace.entity.typePublication
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