Publication:

Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?

Date

2014
Journal article
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dc.contributor.authorVerhulst, Anne
dc.contributor.authorVerreck, Devin
dc.contributor.authorPourghaderi, Mohammad Ali
dc.contributor.authorVan de Put, Maarten
dc.contributor.authorSoree, Bart
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T07:56:55Z
dc.date.available2021-10-22T07:56:55Z
dc.date.embargo9999-12-31
dc.date.issued2014
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24780
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/105/4/10.1063/1.4891348
dc.source.beginpage43103
dc.source.issue4
dc.source.journalApplied Physics Letters
dc.source.volume105
dc.title

Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?

dc.typeJournal article
dspace.entity.typePublication
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