Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells

dc.contributor.author	Goux, Ludovic
dc.contributor.author	Fantini, Andrea
dc.contributor.author	Chen, Yangyin
dc.contributor.author	Redolfi, Augusto
dc.contributor.author	Degraeve, Robin
dc.contributor.author	Jurczak, Gosia
dc.contributor.imecauthor	Goux, Ludovic
dc.contributor.imecauthor	Fantini, Andrea
dc.contributor.imecauthor	Chen, Yangyin
dc.contributor.imecauthor	Redolfi, Augusto
dc.contributor.imecauthor	Degraeve, Robin
dc.contributor.imecauthor	Jurczak, Gosia
dc.contributor.orcidimec	Goux, Ludovic::0000-0002-1276-2278
dc.date.accessioned	2021-10-22T01:41:31Z
dc.date.available	2021-10-22T01:41:31Z
dc.date.embargo	9999-12-31
dc.date.issued	2014
dc.identifier.issn	2162-8726
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/23870
dc.identifier.url	http://ssl.ecsdl.org/content/3/11/Q79.short?rss=1
dc.source.beginpage	Q79
dc.source.endpage	Q81
dc.source.issue	11
dc.source.journal	ECS Solid State Letters
dc.source.volume	3
dc.title	Evidences of electrode-controlled retention properties in Ta2O5-based resistive-switching memory cells
dc.type	Journal article
dspace.entity.type	Publication
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