Publication:

Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop

Date

2012
Journal article
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dc.contributor.authorMarcon, Denis
dc.contributor.authorViaene, John
dc.contributor.authorFavia, Paola
dc.contributor.authorBender, Hugo
dc.contributor.authorKang, Xuanwu
dc.contributor.authorLenci, Silvia
dc.contributor.authorStoffels, Steve
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorViaene, John
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorLenci, Silvia
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-20T13:11:33Z
dc.date.available2021-10-20T13:11:33Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0026-2714
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21094
dc.identifier.urlhttp://dx.doi.org/10.1016/j.microrel.2012.06.052
dc.source.beginpage2188
dc.source.endpage2193
dc.source.issue9_10
dc.source.journalMicroelectronics Reliability
dc.source.volume52
dc.title

Reliability of AlGaN/GaN HEMTs: permanent leakage current increase and output current drop

dc.typeJournal article
dspace.entity.typePublication
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