High-Precision Inline Metrology of Si Photonics Devices on 300mm Wafers Using CD-SEM

Abstract

We have evaluated the fabrication deviations of a Si third-order polynomial interconnected circular (TOPIC) ring oscillator on a 300mm wafer using CD-SEM. Strong correlation between the width of waveguides and the resonant wavelength was observed, consistent with the simulated dimension dependence of the optics. Moreover, we performed 2D measurements and evaluated the EPE. Our results show that dimensions of the TOPIC ring resonator are promising indices for monitoring fabrication deviations of Si photonics devices. The metrology using CDSEM enables us to evaluate the dimensions of Si photonics devices inline at high precision from a single component in the process, leveraging the manufacturing at 300mm level.