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Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O

 
dc.contributor.authorFishchuk, Ivan I.
dc.contributor.authorKadashchuk, Andriy
dc.contributor.authorRolin, Cedric
dc.contributor.authorBaessler, Heinz
dc.contributor.authorKoehler, Anna
dc.contributor.authorHeremans, Paul
dc.contributor.authorGenoe, Jan
dc.contributor.imecauthorKadashchuk, Andriy
dc.contributor.imecauthorRolin, Cedric
dc.contributor.imecauthorHeremans, Paul
dc.contributor.imecauthorGenoe, Jan
dc.contributor.orcidimecRolin, Cedric::0000-0001-5542-8504
dc.contributor.orcidimecHeremans, Paul::0000-0003-2151-1718
dc.contributor.orcidimecGenoe, Jan::0000-0002-4019-5979
dc.contributor.orcidimecKadashchuk, Andriy::0000-0001-8459-7825
dc.date.accessioned2022-08-31T09:12:47Z
dc.date.available2022-07-21T02:27:23Z
dc.date.available2022-07-26T08:17:43Z
dc.date.available2022-08-31T09:12:47Z
dc.date.embargo2022-12-03
dc.date.issued2022
dc.description.wosFundingTextThe authors acknowledge funding through the EU Marie Sklodowska-Curie ITN TADFlife grant (Grant No. 812872). This research was also supported by the European Research Council under the ERC Grant Agreement No. 835133 (ULTRA-LUX), VW Foundation, and by National Academy of Science of Ukraine under Project No. B/204 and Grant No. NRFU 2020.01/0144.
dc.identifier.doi10.1103/PhysRevB.105.245201
dc.identifier.issn2469-9950
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/40154
dc.publisherAMER PHYSICAL SOC
dc.source.beginpage245201
dc.source.issue24
dc.source.journalPHYSICAL REVIEW B
dc.source.numberofpages11
dc.source.volume105
dc.subject.disciplinePhysics
dc.subject.keywordsCONDUCTIVITY
dc.subject.keywordsTEMPERATURE
dc.subject.keywordsFIGURE
dc.subject.keywordsMERIT
dc.title

Random band-edge model description of thermoelectricity in high-mobility disordered semiconductors: Application to the amorphous oxide In-Ga-Zn-O

dc.typeJournal article
dspace.entity.typePublication
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