Publication:

Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions

Date

1997
Journal article
Simple item page Full metadata Statistics
 
dc.contributor.authorVerhaege, Koen
dc.contributor.authorRuss, Christian
dc.contributor.authorLuchies, J. M.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorKuper, F. G.
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-09-30T10:01:55Z
dc.date.available2021-09-30T10:01:55Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2285
dc.source.beginpage1972
dc.source.endpage1980
dc.source.issue11
dc.source.journalIEEE Trans. Electron Devices
dc.source.volume44
dc.title

Grounded-gate nMOS transistor behaviour under CDM ESD stress conditions

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
2262.pdf
Size:
196.04 KB
Format:
Adobe Portable Document Format
Download
Publication available in collections:
Articles