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On quantum effects and low frequency noise spectroscopy in Si gate-all-around nanowire MOSFETs at cryogenic temperatures

Date

2017
Proceedings Paper
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dc.contributor.authorBoudier, Dimitri
dc.contributor.authorCretu, Bogdan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorVeloso, Anabela
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T03:07:17Z
dc.date.available2021-10-24T03:07:17Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27909
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7962578/
dc.source.beginpage5
dc.source.conferenceJoint International EUROSOI Workshop and International Conference on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate3/04/2017
dc.source.conferencelocationAthens Greece
dc.source.endpage8
dc.title

On quantum effects and low frequency noise spectroscopy in Si gate-all-around nanowire MOSFETs at cryogenic temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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