Publication:

Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

Date

2024
Proceedings Paper
https://doi.org/10.1109/EDTM58488.2024.10512269
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dc.contributor.authorChiarella, Thomas
dc.contributor.authorMatagne, Philippe
dc.contributor.authorMertens, Hans
dc.contributor.authorHosseini, Maryam
dc.contributor.authorZhou, X.
dc.contributor.authorEyben, Pierre
dc.contributor.authorArimura, Hiroaki
dc.contributor.authorGupta, Anshul
dc.contributor.authorRichard, Olivier
dc.contributor.authorDrijbooms, Chris
dc.contributor.authorCaluwaerts, Rudy
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMitard, Jerome
dc.contributor.imecauthorChiarella, T.
dc.contributor.imecauthorMatagne, P.
dc.contributor.imecauthorMertens, H.
dc.contributor.imecauthorHosseini, M.
dc.contributor.imecauthorZhou, X.
dc.contributor.imecauthorEyben, P.
dc.contributor.imecauthorArimura, H.
dc.contributor.imecauthorGupta, A.
dc.contributor.imecauthorRichard, O.
dc.contributor.imecauthorDrijbooms, C.
dc.contributor.imecauthorCaluwaerts, R.
dc.contributor.imecauthorHoriguchi, N.
dc.contributor.imecauthorMitard, J.
dc.date.accessioned2024-09-14T17:21:09Z
dc.date.available2024-09-14T17:21:09Z
dc.date.issued2024
dc.identifier.doi10.1109/EDTM58488.2024.10512269
dc.identifier.eisbn979-8-3503-7152-9
dc.identifier.isbn979-8-3503-8308-9
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44488
dc.publisherIEEE
dc.source.beginpage16
dc.source.conference8th Electron Devices Technology & Manufacturing Conference (EDTM)
dc.source.conferencedate2024-03-17
dc.source.conferencelocationBangalore
dc.source.endpage18
dc.source.numberofpages3
dc.title

Towards Improved Nanosheet-Based Complementary Field Effect Transistor (CFET) Performance Down to 42nm Contacted Gate Pitch

dc.typeProceedings paper
dspace.entity.typePublication
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