Publication:

Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability

Date

2010
Proceedings Paper
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dc.contributor.authorVandelli, Luca
dc.contributor.authorArreghini, Antonio
dc.contributor.authorPadovani, Andrea
dc.contributor.authorLarcher, Luca
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorDella Marca, Vincenzo
dc.contributor.authorPavan, Paolo
dc.contributor.authorJurczak, Gosia
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-18T23:17:37Z
dc.date.available2021-10-18T23:17:37Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18209
dc.source.beginpage731
dc.source.conference48th Annual IEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/05/2010
dc.source.conferencelocationAnaheim, CA USA
dc.source.endpage737
dc.title

Role of holes and electrons during erase of TANOS memories: evidence for dipole formation and its impact on reliability

dc.typeProceedings paper
dspace.entity.typePublication
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