Publication:

Ge-source vertical tunnel FETs using a novel replacement-source integration scheme

Date

2014-12
Journal article
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dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorVerhulst, Anne
dc.contributor.authorWalke, Amey
dc.contributor.authorSimoen, Eddy
dc.contributor.authorDevriendt, Katia
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorDemand, Marc
dc.contributor.authorBryce, George
dc.contributor.authorLoo, Roger
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorVandeweyer, Tom
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorWalke, Amey
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorDevriendt, Katia
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBryce, George
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorVandeweyer, Tom
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecDevriendt, Katia::0000-0002-0662-7926
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-22T05:16:32Z
dc.date.available2021-10-22T05:16:32Z
dc.date.issued2014-12
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24454
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6954497
dc.source.beginpage4032
dc.source.endpage4039
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume61
dc.title

Ge-source vertical tunnel FETs using a novel replacement-source integration scheme

dc.typeJournal article
dspace.entity.typePublication
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