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Low temperature in-situ P-doped Ge using Ge2H6 for use in optical applications

Date

2015-05
Meeting abstract
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dc.contributor.authorShimura, Yosuke
dc.contributor.authorSrinivasan, Ashwyn
dc.contributor.authorVan Deun, Rik
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorVan Campenhout, Joris
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorSrinivasan, Ashwyn
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorVan Campenhout, Joris
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-22T22:50:08Z
dc.date.available2021-10-22T22:50:08Z
dc.date.issued2015-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25901
dc.source.beginpage91
dc.source.conference9th International Conference on Silicon Epitaxy and Heterostructures - ICSI9
dc.source.conferencedate17/05/2014
dc.source.conferencelocationMontreal Canada
dc.source.endpage92
dc.title

Low temperature in-situ P-doped Ge using Ge2H6 for use in optical applications

dc.typeMeeting abstract
dspace.entity.typePublication
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