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The low-frequency noise in n-MOSFETs on strained silicon: Is there room for improvement?

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dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDelhougne, Romain
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLoo, Roger
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T05:05:37Z
dc.date.available2021-10-16T05:05:37Z
dc.date.embargo9999-12-31
dc.date.issued2005-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11210
dc.source.beginpage349
dc.source.conferenceULSI Process Integration IV
dc.source.conferencedate15/05/2005
dc.source.conferencelocationQuebec Canada
dc.source.endpage359
dc.title

The low-frequency noise in n-MOSFETs on strained silicon: Is there room for improvement?

dc.typeProceedings paper
dspace.entity.typePublication
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