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Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation

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dc.contributor.authorDe Wolf, Stefaan
dc.contributor.authorAgostinelli, Guido
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorVitanov, P.
dc.date.accessioned2021-10-16T01:14:22Z
dc.date.available2021-10-16T01:14:22Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10340
dc.source.beginpage063303-1
dc.source.endpage063303-8
dc.source.issue6
dc.source.journalJournal of Applied Physics
dc.source.volume97
dc.title

Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiNx films and silicon substrate surface roughness on surface passivation

dc.typeJournal article
dspace.entity.typePublication
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