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Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

Date

1997
Journal article
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dc.contributor.authorAbou-Khalil, M.
dc.contributor.authorSchreurs, Dominique
dc.contributor.authorNauwelaers, Bart
dc.contributor.authorVan Rossum, Marc
dc.contributor.authorMaciejko, R.
dc.contributor.authorWuyts, Koen
dc.contributor.imecauthorSchreurs, Dominique
dc.contributor.imecauthorNauwelaers, Bart
dc.date.accessioned2021-09-30T07:54:38Z
dc.date.available2021-09-30T07:54:38Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1693
dc.source.beginpage6312
dc.source.endpage18
dc.source.issue12
dc.source.journalJournal of Applied Physics
dc.source.volume82
dc.title

Effect of capture and escape phenomena in Monte Carlo technique on the simulation of the nonlinear characteristics in high electron mobility transistors

dc.typeJournal article
dspace.entity.typePublication
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