Publication:

Larger intrinsic voltage gain achieved with UTBOX SOI devices and thin silicon film

Date

2012
Proceedings Paper
Simple item page Full metadata Statistics
 
dc.contributor.authorRodrigues, M.
dc.contributor.authorGaleti, M.
dc.contributor.authorMartino, J.A.
dc.contributor.authorCollaert, Nadine
dc.contributor.authorSimoen, Eddy
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-20T15:22:59Z
dc.date.available2021-10-20T15:22:59Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21412
dc.source.beginpage25
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate18/03/2012
dc.source.conferencelocationShanghai China
dc.source.endpage31
dc.title

Larger intrinsic voltage gain achieved with UTBOX SOI devices and thin silicon film

dc.typeProceedings paper
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions