Publication:
The effect of forming gas annealing on capacitance-voltage hysteresis in the high- $j/In0.53Ga0.47As metal-oxide-semiconductor system
Date
| dc.contributor.author | Lin, Jun | |
| dc.contributor.author | Monaghan, Scott | |
| dc.contributor.author | Cherkaoui, Karim | |
| dc.contributor.author | Povey, Ian M. | |
| dc.contributor.author | Sheehan, Brendan | |
| dc.contributor.author | Franco, Jacopo | |
| dc.contributor.author | Hurley, Paul K. | |
| dc.contributor.imecauthor | Franco, Jacopo | |
| dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
| dc.date.accessioned | 2021-10-23T12:14:41Z | |
| dc.date.available | 2021-10-23T12:14:41Z | |
| dc.date.issued | 2016 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/26913 | |
| dc.source.conference | 19th Workshop on Dielectrics in Microelectronics - WoDiM | |
| dc.source.conferencedate | 27/06/2016 | |
| dc.source.conferencelocation | Aci Castello Italy | |
| dc.title | The effect of forming gas annealing on capacitance-voltage hysteresis in the high- $j/In0.53Ga0.47As metal-oxide-semiconductor system | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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