Publication:

Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors

Date

2017
Proceedings Paper
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dc.contributor.authorVerreck, Devin
dc.contributor.authorVerhulst, Anne
dc.contributor.authorVan de Put, Maarten L.
dc.contributor.authorSoree, Bart
dc.contributor.authorMagnus, Wim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorMocuta, Anda
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorVerreck, Devin
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorSoree, Bart
dc.contributor.imecauthorMagnus, Wim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecVerreck, Devin::0000-0002-3833-5880
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecSoree, Bart::0000-0002-4157-1956
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-24T18:06:07Z
dc.date.available2021-10-24T18:06:07Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29861
dc.identifier.urlhttp://ieeexplore.ieee.org/document/8085256/
dc.source.beginpage29
dc.source.conferenceInternational Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate7/09/2017
dc.source.conferencelocationKamakura Japan
dc.source.endpage32
dc.title

Self-consistent 30-band simulation approach for (non-)uniformly strained confined heterostructure tunnel field-effect transistors

dc.typeProceedings paper
dspace.entity.typePublication
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